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  Datasheet File OCR Text:
 Darlington
2SD2016
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=1.5mA IC=1A, IB=1.5mA VCE=12V, IE=-0.1A VCB=10V, f=1MHz 2SD2016 10max 10max 200min 1000 to 15000 1.5max 2.0max 90typ 40typ V V MHz pF
13.0min
Equivalent circuit
B
C
(2k) (200) E
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2016 200 200 6 3 0.5 25(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Igniter, Relay and General Purpose
(Ta=25C) Unit
External Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 BCE
IC - VCE Characteristics (Typical)
A
mA
V CE ( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - VBE Temperature Characteristics (Typical)
3 (V CE= 4V)
3
3m
1.5
1mA
Collector Current I C( A)
0.5m
A
2
2
Collector Current I C( A)
2
p)
Tem
mp) (Cas e Te 25C
(Ca
1
1
12 5C
25C
1
se
-5 5C
0
0
1
2
3
4
0
0.2
1 Base Current I B( mA)
3
0
0
1 Base-Emittor Voltage V B E( V)
-55C (C
125
C
ase Tem
p)
I B= 0
.3m
A
0.2
0.80.2
a b
o3.30.2
Weight : Approx 2.0g a. Type No. b. Lot No.
2
Collector-Emitter Voltage V C E( V)
hFE - IC Characteristics (Typical)
(VCE=4V) 10000 5000 DC Cur rent Gain h FE
hFE - I C Temperature Characteristics (Typical)
(V C E= 4V) 10000 5000 DC Curr ent Gain h F E
j-a - t Characteristics
j - a( C/W)
Transient Thermal Resistance 5
125
C
1000 500
25
C
1000 500
C -55
100 50
1
100 50 0.03 0.1 0.5 1 3 10 0.03 0.1 0.5 1 3
0.5
1
5
10
50 Time t(ms)
100
500 1000
Collector Current I C( A)
Collector Current I C (A)
fT - IE Characteristics (Typical)
(VCE=12V) 80
Safe Operating Area (Single Pulse)
30
P c - T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm
Cut- off F req uency f T( MH Z)
60
Ma xim um Powe r Dissipat io n P C( W)
20
W ith In
40
fin
150x150x2
1 00x1 0 10
0x 2
ite
he
at
si
nk
20
50x50x2
Without Heatsink 2
0 -0.01
-0.05
-0.1
-0.5
-1
-3
0
0
25
50
75
100
125
150
Emitter Current I E( A)
Ambient Temperature Ta(C)
141


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